Evolution of elongated (In,Ga)As-GaAs(100) islands with low indium content

被引：19

作者：

Cho, SO ^{[1
]}

Wang, ZM ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1883709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nucleation and growth of (In,Ga)As-GaAs(100) islands with low In content by molecular-beam epitaxy is investigated by scanning tunneling microscopy. The islands tend to nucleate at upper convex edges of surface steps due to elastic strain relaxation. They are elongated along [01-1] with a flat top (100) facet. The growth of the islands, mainly through uphill transport of the (In,Ga)As material, is characterized by shrinking of the top (100) facet but the ratio of island elongation keeps constant. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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