Temperature and pressure dependence of the recombination processes in 1.5 μm InAs/InP (311)B quantum dot lasers

被引：18
作者：
Masse, N. F.
Homeyer, E.
Marko, I. P.
Adams, A. R.
Sweeney, S. J. [1 ]
Dehaese, O.
Piron, R.
Grillot, F.
Loualiche, S.
机构：
[1] Univ Surrey, Adv Inst Technol, Guildford GU2 7XH, Surrey, England
[2] INSA Rennes, UMR FOTON LENS 6082, F-35403 Rennes, France
[3] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
[4] INSA Rennes, UMR FOTON LENS 6082, F-35403 Rennes, France
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2790777
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The threshold current and its radiative component in 1.5 mu m InAs/InP (311)B quantum dot lasers are measured as a function of the temperature. Despite an almost temperature insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T-0 approximate to 55 K around 290 K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the nonradiative current and temperature sensitivity of these devices. (C) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 18 条
[1]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[2]   High-gain and low-threshold InAs quantum-dot lasers on InP -: art. no. 243107 [J].
Caroff, P ;
Paranthoen, C ;
Platz, C ;
Dehaese, O ;
Folliot, H ;
Bertru, N ;
Labbé, C ;
Piron, R ;
Homeyer, E ;
Le Corre, A ;
Loualiche, S .
APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3
[3]   Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP(311)B substrates:: Theory and experiment [J].
Cornet, C. ;
Schliwa, A. ;
Even, J. ;
Dore, F. ;
Celebi, C. ;
Letoublon, A. ;
Mace, E. ;
Paranthoen, C. ;
Simon, A. ;
Koenraad, P. M. ;
Bertru, N. ;
Bimberg, D. ;
Loualiche, S. .
PHYSICAL REVIEW B, 2006, 74 (03)
[4]   Room-temperature operation of InP-based InAs quantum dot laser [J].
Kim, JS ;
Lee, JH ;
Hong, SU ;
Han, WS ;
Kwack, HS ;
Lee, CW ;
Oh, DK .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1607-1609
[5]   Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core [J].
Lelarge, F ;
Rousseau, B ;
Dagens, B ;
Poingt, F ;
Pommereau, E ;
Accard, A .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (07) :1369-1371
[6]   Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure [J].
Marko, I. P. ;
Adams, A. R. ;
Sweeney, S. J. ;
Masse, N. F. ;
Krebs, R. ;
Reithmaier, J. P. ;
Forchel, A. ;
Mowbray, D. J. ;
Skolnick, M. S. ;
Liu, H. Y. ;
Groom, K. M. ;
Hatori, N. ;
Sugawara, M. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (01) :82-86
[7]   The role of Auger recombination in InAs 1.3-/μm quantum-dot lasers investigated using high hydrostatic pressure [J].
Marko, IP ;
Andreev, AD ;
Adams, AR ;
Krebs, R ;
Reithmaier, JP ;
Forchel, A .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) :1300-1307
[8]   Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers -: art. no. 211114 [J].
Marko, IP ;
Massé, NF ;
Sweeney, SJ ;
Andreev, AD ;
Adams, AR ;
Hatori, N ;
Sugawara, M .
APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3
[9]   Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature [J].
Masse, N. F. ;
Adams, A. R. ;
Sweeney, S. J. .
APPLIED PHYSICS LETTERS, 2007, 90 (16)
[10]   Temperature dependence of the gain in p-doped and intrinsic 1.3 μm InAs/GaAs quantum dot lasers [J].
Masse, N. F. ;
Sweeney, S. J. ;
Marko, I. P. ;
Adams, A. R. ;
Hatori, N. ;
Sugawara, M. .
APPLIED PHYSICS LETTERS, 2006, 89 (19)
12