Temperature and pressure dependence of the recombination processes in 1.5 μm InAs/InP (311)B quantum dot lasers

被引：18

作者：

Masse, N. F.

Homeyer, E.

Marko, I. P.

Adams, A. R.

Sweeney, S. J. ^{[1
]}

Dehaese, O.

Piron, R.

Grillot, F.

Loualiche, S.

机构：

[1] Univ Surrey, Adv Inst Technol, Guildford GU2 7XH, Surrey, England

[2] INSA Rennes, UMR FOTON LENS 6082, F-35403 Rennes, France

[3] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[4] INSA Rennes, UMR FOTON LENS 6082, F-35403 Rennes, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2790777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The threshold current and its radiative component in 1.5 mu m InAs/InP (311)B quantum dot lasers are measured as a function of the temperature. Despite an almost temperature insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T-0 approximate to 55 K around 290 K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the nonradiative current and temperature sensitivity of these devices. (C) 2007 American Institute of Physics.

引用

页数：3

共 18 条

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