Fluctuations of optical and electrical parameters and their correlation of multiple-quantum-well InGaAs/InP lasers

被引：0
|
作者：
Pralgauskaité, S [1 ]
Palenskis, V [1 ]
Matukas, J [1 ]
机构：
[1] Vilnius State Univ, Fac Phys, Dept Radiophys, LT-2040 Vilnius, Lithuania
来源：
ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES | 2004年 / 151卷
关键词：
semiconductor laser; optical noise; electrical noise; correlation factor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise characteristics of Fabry-Perot (F-P) and distributed feedback, ridge-waveguide and buried-heterostructures InGaAsP/InP multiple-quantum-well lasers investigation has been carrier out. Mode hopping effect characteristic for F-P laser operation is caused by carrier gathering in barrier and cladding layers, and intensive optical and electrical noise during mode hopping is related with recombination in these layers. Defective laser diodes structures can be revealed by noise characteristic investigation, especially the correlation factor is more informative at threshold.
引用
收藏
页码：79 / 88
页数：10
相关论文
共 50 条
  • [1] INGAAS INP MULTIPLE-QUANTUM-WELL MODULATORS IN EXPERIMENT AND THEORY
    SCHWEDLER, R
    MIKKELSEN, H
    WOLTER, K
    LASCHET, D
    HERGETH, J
    KURZ, H
    JOURNAL DE PHYSIQUE III, 1994, 4 (12): : 2341 - 2359
  • [2] OPTICAL ANALYSIS OF MULTIPLE-QUANTUM-WELL LASERS
    STREIFER, W
    SCIFRES, DR
    BURNHAM, RD
    APPLIED OPTICS, 1979, 18 (21): : 3547 - 3548
  • [3] Optimized design parameters of InGaAs-InP quantum well lasers
    Vaya, Pukhraj
    Chua, Soo Jin
    Kumar, Kiran
    Materials science & engineering. B, Solid-state materials for advanced technology, 1995, B35 (1-3): : 17 - 23
  • [4] Optimized design parameters of InGaAs-InP quantum well lasers
    Vaya, P
    Chua, SJ
    Kumar, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 17 - 23
  • [5] Tensile strained InGaAs/InP multiple-quantum-well structures studied by magneto-optical spectroscopy
    Shao, J
    Haase, D
    Dörnen, A
    Härle, V
    Scholz, F
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4303 - 4307
  • [6] 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure
    Wang, Huolei
    Mi, Junping
    Zhou, Xuliang
    Meriggi, Laura
    Steer, Matthew
    Cui, Bifeng
    Chen, Weixi
    Pan, Jiaoqing
    Ding, Ying
    OPTICS LETTERS, 2013, 38 (22) : 4868 - 4871
  • [7] TAPERED WAVE-GUIDE INGAAS/INGAASP MULTIPLE-QUANTUM-WELL LASERS
    KOCH, TL
    KOREN, U
    EISENSTEIN, G
    YOUNG, MG
    ORON, M
    GILES, CR
    MILLER, BI
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (02) : 88 - 90
  • [8] THE GAIN-LEVER EFFECT IN INGAASP/INP MULTIPLE-QUANTUM-WELL LASERS
    SELTZER, CP
    WESTBROOK, LD
    WICKES, HJ
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1995, 13 (02) : 283 - 289
  • [9] OPTICAL BISTABILITY IN AN INGAAS/INP MULTIPLE-QUANTUM-WELL WAVE-GUIDE FABRY-PEROT CAVITY
    EHRLICH, JE
    NEILSON, DT
    WALKER, AC
    KENNEDY, GT
    GRANT, RS
    SIBBETT, W
    HOPKINSON, M
    PATE, M
    APPLIED PHYSICS LETTERS, 1993, 63 (12) : 1610 - 1612
  • [10] HIGH-FREQUENCY INGAAS/INP MULTIPLE-QUANTUM-WELL BURIED-MESA ELECTROABSORPTION OPTICAL MODULATOR
    KOREN, U
    MILLER, BI
    TUCKER, RS
    EISENSTEIN, G
    BARJOSEPH, I
    MILLER, DAB
    CHEMLA, DS
    ELECTRONICS LETTERS, 1987, 23 (12) : 621 - 622
12345