Control of energy band, layer structure and vacancy defect of graphitic carbon nitride by intercalated hydrogen bond effect of NO3- toward improving photocatalytic performance

Simultaneously exploration control of energy band, layer structure and vacancy defect of semiconductor photocatalysts for hydrogen (H-2) evolution is highly desirable. For this purpose, the ultrathin graphitic carbon nitride (ug-C3N4) are prepared by intercalated hydrogen bond effect of NO3- for the first time reported. More importantly, the thickness, band gap energy, specific surface area and nitrogen vacancy intensity of ug-C3N4 nanosheets can be controlled by the concentration of NO3- in the inserted layer. The method not only endow ug-C3N4 nanosheets with super large specific surface area and nitrogen vacancy-rich that provide more active sites and speed up the photogenerated charge transfer, but also possess suitable conduction band position and thus more conducive to H-2 production. The photocatalytic performance of ug-C3N4 for H-2 evolution (836.3 mu mol h(-1) g(-1)) and 2-Mercaptobenzothiazole (MBT) decomposition (84%) is significantly enhanced by energy band, layer structure and vacancy defect optimization, which is over 4.0 and 1.75 times higher than the bulk g-C3N4 powder. We firmly believe that the work emblems a significant step toward control engineering for energy conversion and environmental pollution.