Preparation of diamond like carbon thin films above room temperature and their properties

被引:8
作者
Aryal, Hare Ram [1 ]
Adhikari, Sudip [2 ]
Ghimire, Dilip Chandra [1 ]
Kalita, Golap [1 ]
Umeno, Masayoshi [2 ]
机构
[1] Chubu Univ, Dept Elect & Elect Engn, Kasugai, Aichi 4878501, Japan
[2] Chubu Univ, Elect & Informat Engn Dept, Kasugai, Aichi 4878501, Japan
关键词
DLC; surface-wave plasma; substrate temperature; FT-IR;
D O I
10.1016/j.diamond.2007.10.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond like carbon (DLC) thin films were deposited on p-type silicon (p-Si), quartz and ITO substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at different substrate temperatures (RT similar to 300 degrees C). Argon (Ar: 200 seem) was used as carrier gas while acetylene (C2H2: 20 seem) and nitrogen (N: 5 seem) were used as plasma source. Analytical methods such as X-ray photoelectron spectroscopy (XPS), FT-IR and UV-visible spectroscopy were employed to investigate the structural and optical properties of the DLC thin films respectively. FT-IR spectra show the structural modification of the DLC thin films with substrate temperatures showing the distinct peak around 3350 cm(-1) wave number; which may corresponds to the sp(2) C-H bond. Tauc optical gap and film thickness both decreased with increasing substrate temperature. The peaks of XPS core level C 1 s spectra of the DLC thin films shifted towards lower binding energy with substrate temperature. We also got the small photoconductivity action of the film deposited at 300 degrees C on ITO substrate. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:680 / 683
页数:4
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