Effect of Underlying Bi2Se3 Surface on Magnetic Properties of Ni Films

被引：1

作者：

Nasir, Alviu Rey ^{[1
]}

Yoo, Taehee ^{[2
]}

Bac, Seul-Ki ^{[1
]}

Lee, Hakjoon ^{[1
]}

Lee, Sangyeop ^{[1
]}

Choi, Seonghoon ^{[1
]}

Lee, Sanghoon ^{[1
]}

Liu, Xinyu ^{[2
]}

Dobrowolska, M. ^{[2
]}

Furdyna, Jacek K. ^{[2
]}

机构：

[1] Korea Univ, Dept Phys, Seoul 02841, South Korea

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2017年 / 53卷 / 11期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

Ferromagnetic (FM) films; magnetic anisotropy; planar Hall effect (PHR); TOPOLOGICAL INSULATOR; ELECTRICAL DETECTION; SPIN POLARIZATION; TORQUE; PHASE;

D O I：

10.1109/TMAG.2017.2729500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated magnetic properties of Ni film specimens deposited either on GaAs or on Bi2Se3 surfaces. The magnetization saturation field along the out-of-plane direction observed in the Hall data was weaker for the Ni/Bi2Se3 sample than for the Ni/GaAs sample. On the other hand, planar Hall resistance measurements showed the larger in-plane coercive field for Ni/Bi2Se3 than for Ni/GaAs. These changes of magnetic hardness observed along the out-of-plane and in-plane directions in the Ni/Bi2Se3 specimen are consistent with effects arising from spin-orbit interaction at the surface of the Bi2Se3 topological insulator.

引用

页数：4

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