Effect of Underlying Bi2Se3 Surface on Magnetic Properties of Ni Films

被引:1
|
作者
Nasir, Alviu Rey [1 ]
Yoo, Taehee [2 ]
Bac, Seul-Ki [1 ]
Lee, Hakjoon [1 ]
Lee, Sangyeop [1 ]
Choi, Seonghoon [1 ]
Lee, Sanghoon [1 ]
Liu, Xinyu [2 ]
Dobrowolska, M. [2 ]
Furdyna, Jacek K. [2 ]
机构
[1] Korea Univ, Dept Phys, Seoul 02841, South Korea
[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
基金
新加坡国家研究基金会; 美国国家科学基金会;
关键词
Ferromagnetic (FM) films; magnetic anisotropy; planar Hall effect (PHR); TOPOLOGICAL INSULATOR; ELECTRICAL DETECTION; SPIN POLARIZATION; TORQUE; PHASE;
D O I
10.1109/TMAG.2017.2729500
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated magnetic properties of Ni film specimens deposited either on GaAs or on Bi2Se3 surfaces. The magnetization saturation field along the out-of-plane direction observed in the Hall data was weaker for the Ni/Bi2Se3 sample than for the Ni/GaAs sample. On the other hand, planar Hall resistance measurements showed the larger in-plane coercive field for Ni/Bi2Se3 than for Ni/GaAs. These changes of magnetic hardness observed along the out-of-plane and in-plane directions in the Ni/Bi2Se3 specimen are consistent with effects arising from spin-orbit interaction at the surface of the Bi2Se3 topological insulator.
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页数:4
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