BIAS TEacMPERATURE INSTABILITY OF BINARY OXIDE BASED RERAM

被引：7

作者：

Fang, Z. ^{[1
]}

Yu, H. Y. ^{[1
]}

Liu, W. J. ^{[1
]}

Pey, K. L. ^{[1
]}

Li, X. ^{[1
]}

Wu, L. ^{[1
]}

Wang, Z. R. ^{[1
]}

Lo, Patrick G. Q. ^{[2
]}

Gao, B. ^{[3
]}

Kang, J. F. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, Singapore 639798, Singapore

[2] Inst Microelect, ASTAR, Singapore, Singapore

[3] Peking Univ, Inst Microelect, Beijing, Peoples R China

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

Bias temperature instability; Resistance random access memory;

D O I：

10.1109/IRPS.2010.5488697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bias temperature instability of TiN/HfOx/Pt resistive random access memory (ReRAM) device is investigated in this work for the first time. As temperature increases (up to 100 degrees C in this work), it is observed that: 1) leakage current at high resistance state (HRS) increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a lower On/Off ratio; 2) set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); 3) electrical stress plays a negligible role as compared to the temperature impact on the ReRAM degradation; and 4) multi-level switching behavior exhibited at room temperature might not be retained.

引用

页码：964 / +

页数：2

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