X-Gamma indirect intersubband transitions in type II GaAs/AlAs superlattices

被引：5
|
作者：
Fenigstein, A
Finkman, E
Bahir, G
Schacham, SE
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] COLL JUDEA & SAMARIA,DEPT ELECT & ELECT ENGN,ARIEL,ISRAEL
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 12期
关键词：
D O I：
10.1063/1.117476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intersubband transitions indirect in both real and momentum spaces were observed in GaAs/AlAs type II short period superlattices. Significant absorption of normal incident radiation, with ''forbidden'' polarization was measured, in addition to absorption in the ''allowed'' configuration. The transition energy shows a strong temperature dependence. This absorption is attributed to X-T transition. Both doped and undoped samples were investigated. Normal incidence absorption is stronger for the doped superlattices. Simulations using a two band model show good agreement to experimental data. (C) 1996 American Institute of Physics.
引用
收藏
页码：1758 / 1760
页数：3
相关论文
共 50 条
  • [41] Ultrafast electron transfer in type II GaAs/AlAs superlattices by femtosecond luminescence
    Deveaud, B
    Clerot, F
    Regreny, A
    Planel, R
    Gerard, JM
    ANNALES DE PHYSIQUE, 1995, 20 (03) : 215 - 227
  • [42] TYPE-II GAAS/ALAS SUPERLATTICES UNDER HIGH-EXCITATION
    BOUJDARIA, K
    SCALBERT, D
    LAGUILLAUME, CBA
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 245 - 248
  • [43] INTERBAND-TRANSITIONS IN ULTRATHIN GAAS-ALAS SUPERLATTICES
    ALOUANI, M
    GOPALAN, S
    GARRIGA, M
    CHRISTENSEN, NE
    PHYSICAL REVIEW LETTERS, 1988, 61 (14) : 1643 - 1646
  • [44] Interface structure in reflection spectra of GaAs/AlAs short-term superlattices near the type I-type II transitions
    Kochereshko, VP
    Sandler, GL
    Davydov, VY
    Suris, RA
    Belousov, MV
    Lovallar, P
    Planel, R
    FIZIKA TVERDOGO TELA, 1996, 38 (07): : 2253 - 2262
  • [45] INDIRECT-DIRECT ANTICROSSING IN GAAS-ALAS SUPERLATTICES INDUCED BY AN ELECTRIC-FIELD - EVIDENCE OF GAMMA-X MIXING
    MEYNADIER, MH
    NAHORY, RE
    WORLOCK, JM
    TAMARGO, MC
    DEMIGUEL, JL
    STURGE, MD
    PHYSICAL REVIEW LETTERS, 1988, 60 (13) : 1338 - 1341
  • [46] CW PHOTOLUMINESCENCE DETERMINATION OF THERMALLY ACTIVATED FAST X-]GAMMA INTERLAYER ELECTRON-SCATTERING IN TYPE-II GAAS/ALAS SUPERLATTICES
    FU, LP
    BACALZO, FT
    GILLILAND, GD
    CHEN, R
    BAJAJ, KK
    KLEM, J
    PHYSICAL REVIEW B, 1995, 51 (24): : 17630 - 17634
  • [47] PHONON-ASSISTED GAMMA-X TRANSFER IN (001)-GROWN GAAS/ALAS SUPERLATTICES
    RAICHEV, OE
    PHYSICAL REVIEW B, 1994, 49 (08) : 5448 - 5462
  • [48] INDIRECT DIRECT SWITCHING OF GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    MEYNADIER, MH
    NAHORY, RE
    WORLOCK, JM
    TAMARGO, MC
    DEMIGUEL, JL
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S5 - S5
  • [49] Temperature-induced delocalization of excitations in GaAs/AlAs type-II superlattices
    I. Ya. Gerlovin
    Yu. K. Dolgikh
    V. V. Ovsyankin
    Yu. P. Efimov
    I. V. Ignat’ev
    E. E. Novitskaya
    Physics of the Solid State, 1998, 40 : 1041 - 1046
  • [50] Exciton orientation-to-alignment convertion in Type-II GaAs/AlAs superlattices
    Dzhioev, RI
    Gibbs, HM
    Ivchenko, EL
    Khitrova, G
    Korenev, VL
    Tkachuk, MN
    Zakharchenya, BP
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 173 - 176
12345