X-Gamma indirect intersubband transitions in type II GaAs/AlAs superlattices

被引：5
|
作者：
Fenigstein, A
Finkman, E
Bahir, G
Schacham, SE
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] COLL JUDEA & SAMARIA,DEPT ELECT & ELECT ENGN,ARIEL,ISRAEL
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 12期
关键词：
D O I：
10.1063/1.117476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intersubband transitions indirect in both real and momentum spaces were observed in GaAs/AlAs type II short period superlattices. Significant absorption of normal incident radiation, with ''forbidden'' polarization was measured, in addition to absorption in the ''allowed'' configuration. The transition energy shows a strong temperature dependence. This absorption is attributed to X-T transition. Both doped and undoped samples were investigated. Normal incidence absorption is stronger for the doped superlattices. Simulations using a two band model show good agreement to experimental data. (C) 1996 American Institute of Physics.
引用
收藏
页码：1758 / 1760
页数：3
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