X-Gamma indirect intersubband transitions in type II GaAs/AlAs superlattices

被引：5
作者：
Fenigstein, A
Finkman, E
Bahir, G
Schacham, SE
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] COLL JUDEA & SAMARIA,DEPT ELECT & ELECT ENGN,ARIEL,ISRAEL
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 12期
关键词：
D O I：
10.1063/1.117476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intersubband transitions indirect in both real and momentum spaces were observed in GaAs/AlAs type II short period superlattices. Significant absorption of normal incident radiation, with ''forbidden'' polarization was measured, in addition to absorption in the ''allowed'' configuration. The transition energy shows a strong temperature dependence. This absorption is attributed to X-T transition. Both doped and undoped samples were investigated. Normal incidence absorption is stronger for the doped superlattices. Simulations using a two band model show good agreement to experimental data. (C) 1996 American Institute of Physics.
引用
收藏
页码：1758 / 1760
页数：3
相关论文
共 13 条
[1]  
BARRAU J, 1989, J APPL PHYS, V65, P350
[2]  
CINGOLANI R, 1990, OPT QUANT ELECTRON, V22, P201
[3]   PHOTOLUMINESCENCE DECAY TIME STUDIES OF TYPE-II GAAS/ALAS QUANTUM-WELL STRUCTURES [J].
DAWSON, P ;
MOORE, KJ ;
FOXON, CT ;
THOOFT, GW ;
VANHAL, RPM .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3606-3609
[4]   STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS [J].
DAWSON, P ;
WILSON, BA ;
TU, CW ;
MILLER, RC .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :541-543
[5]   CURRENT-INDUCED INTERSUBBAND ABSORPTION IN GAAS/GAALAS QUANTUM-WELLS [J].
FENIGSTEIN, A ;
FRAENKEL, A ;
FINKMAN, E ;
BAHIR, G ;
SCHACHAM, SE .
APPLIED PHYSICS LETTERS, 1995, 66 (19) :2513-2515
[6]   X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES [J].
FINKMAN, E ;
STURGE, MD ;
TAMARGO, MC .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1299-1301
[7]   CALCULATING THE OPTICAL-PROPERTIES OF MULTIDIMENSIONAL HETEROSTRUCTURES - APPLICATION TO THE MODELING OF QUATERNARY QUANTUM-WELL LASERS [J].
GERSHONI, D ;
HENRY, CH ;
BARAFF, GA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (09) :2433-2450
[8]   PHOTOVOLTAIC GAAS QUANTUM-WELL INFRARED DETECTORS AT 4.2 MU-M USING INDIRECT ALXGA1-X BARRIERS [J].
LEVINE, BF ;
GUNAPALA, SD ;
KOPF, RF .
APPLIED PHYSICS LETTERS, 1991, 58 (14) :1551-1553
[9]   LOW DARK CURRENT DUAL-BAND INFRARED PHOTODETECTOR USING THIN ALAS BARRIERS AND GAMMA-X MIXED INTERSUBBAND TRANSITION IN GAAS QUANTUM-WELLS [J].
LIU, HC ;
WILSON, PH ;
LAMM, M ;
STEELE, AG ;
WASILEWSKI, ZR ;
LI, JM ;
BUCHANAN, M ;
SIMMONS, JG .
APPLIED PHYSICS LETTERS, 1994, 64 (04) :475-477
[10]  
MEYANDIER MH, 1988, PHYS REV LETT, V60, P1338
12