Single damascene integration of porous Zirkon ™ version 1 low-k dielectric films

被引:5
作者
Malhouitre, S
Jehoul, C
Van Aelst, J
Struyf, H
Brongersma, S
Carbonell, L
Vos, I
Beyer, G
Van Hove, M
Gronbeck, D
Gallagher, M
Calvert, J
Maex, K
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Shipley Co Inc, LLC, Marlborough, MA USA
[3] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
关键词
low-k; single damascene; Zirkon (TM) LK2000;
D O I
10.1016/S0167-9317(03)00416-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zirkon(TM) LK2000 version 1 dielectric film (Zirkon(TM) is a trademark of Shipley Company L.L.C), a porous methylsilsesquioxane (MSQ)-based spin-on dielectric with a k value targeted at 2.0, has been integrated in single damascene structures. For patterning, a dual SiC/SiO2 CVD hard-mask was used. Surface treatments (DUV ozone (DUV-O-3), plasma treatments) were tested to solve the adhesion issues encountered at the CVD hard-mask and the low-k interface. Adhesion is only improved when plasma treatments are used. Analyses (FTIR, TDS, nano-indentation) show that the plasma treatments only modify the low-k surface. For integration, a plasma treatment (He, NH3, N-2/O-2) prior to deposition of the CVD hard-mask was included. After patterning, copper metallization and CMP of the wafers, electrical evaluation shows that, compared to the reference wafer (no plasma treatment), plasma-treated wafers have a higher yield and a lower sheet resistance. The RC delay is slightly higher for the plasma-treated wafers than for the reference wafer. (C) 2003 Elsevier B.V. All rights reserved.
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页码:302 / 307
页数:6
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