Monte Carlo simulations of the bandwidth of InAlAs avalanche photodiodes

被引：14

作者：

Ma, F ^{[1
]}

Li, N ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 11期

关键词：

avalanche multiplication; avalanche photodiode; bandwidth; impact ionization; impulse response; Monte Carlo methods;

D O I：

10.1109/TED.2003.818149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a Monte. Carlo simulation of the bandwidth of an InAIAs avalanche photodiode with an undepleted absorber. The carrier velocities are simulated in the charge layer and the multiplication region. It is shown that the velocity overshoot effect is not as significant as simpler models have suggested. At high electric field intensity, the electron effective saturation velocity is only slightly higher when impact ionization is significant, compared with when impact ionization is absent. The simulated 3 dB bandwidth is consistent with experiments for gains up to 50.

引用

页码：2291 / 2294

页数：4

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