Two characteristic series of the dislocation photoemission in CdSe and CdTe crystals.

Cadmium telluride and cadmium selenide crystals being important materials for Infrared Photoelectronics are extremely ductile at room temperature and their ductility remains down to temperature 77 K. Therefore during several processing stages as well as at device operating the dislocations and other deformation defects are introduced into the semiconductor materials. In this work it has been shown that the generation and travel of dislocations give rise two series of the characteristic emission which are principally differed one from another. At low temperature (T < 100 K) the dislocation movement gives rise to the metastable characteristic emission lines with small width. It has been shown that new emission lines arise due to the generation of intrinsic point defects in the form of some one-dimensional extended structures during dislocation slip. The low temperature prevents the disordering of these structures. On the other hand simultaneously the dislocation travel gives rise to another characteristic photoemission lines. These lines are stable and directly connected with the dislocation core electron states.