Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS

被引：63
|
作者：
Torres-Torres, R [1 ]
Murphy-Arteaga, R
Reynoso-Hernández, JA
机构：
[1] INAOE, Dept Elect, Puebla, Mexico
[2] CICESE, Dept Appl Phys, Ensenada, Baja California, Mexico
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 07期
关键词：
modeling; on-wafer microwave measurements; parameter extraction; RF-CMOS;
D O I：
10.1109/TED.2005.850644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model which considers the pad parasitic effects when performing on-wafer S-parameter measurements on microwave devices fabricated on silicon substrates is presented. The model parameters are directly determined using a simple and analytical measurement-based method, allowing the electrical representation of the complete test structure using an equivalent circuit. The validity of the model is verified by achieving excellent agreement between simulated and experimental data up to 55 GHz. In addition, a recently reported simplified deembedding procedure is improved and compared to a conventional one to study its validity as frequency increases.
引用
收藏
页码：1335 / 1342
页数：8
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