InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies

被引：13

作者：

Fang, Z. L. ^{[1
]}

Lin, Y. X. ^{[1
]}

Kang, J. Y. ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 06期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES;

D O I：

10.1063/1.3554421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth behavior and luminescence properties of InGaN/GaN quantum wells (QW) on in situ self-organized GaN islands of various distinct smooth sidewall faceting are simultaneously investigated and directly compared. The QW thickness is found to be specific polar angle dependent, leading to variations in QW thickness on multifaceting islands. As a result, by color tuning through island shaping and modifications of the InGaN/GaN QWs on the faceted islands, polychromatic emissions are achieved. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3554421]

引用

页数：3

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