Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material

被引：83

作者：

Zhang, Zhenyu ^{[1
,2
]}

Huo, Fengwei ^{[2
]}

Wu, Yueqin ^{[1
]}

Huang, Han ^{[1
]}

机构：

[1] Univ Queensland, Sch Mech & Min Engn, Brisbane, Qld 4072, Australia

[2] Dalian Univ Technol, Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116024, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE | 2011年 / 51卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Silicon wafer; Surface finish; Subsurface damage; Grinding; HIGH-SPEED; MACHINING CHARACTERISTICS; THERMAL-CONDUCTIVITY; REMOVAL MECHANISMS; SURFACE INTEGRITY; CARBIDE; PERFORMANCE; COMPOSITE; DAMAGE;

D O I：

10.1016/j.ijmachtools.2010.10.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An ultrafine diamond wheel of a mesh size of 12,000 was fabricated by using a hybrid bond material, which consists of silicon carbide, silica and alumina. The employment of the newly developed wheel enabled excellent performance during grinding of silicon wafers. An extremely smooth surface of an average roughness of 0.6 nm was achieved. TEM examinations showed that the total thickness of the defected layer was less than 60 nm. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：18 / 24

页数：7

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