Oxygen pressure control during the sputtering deposition of channel for flexible thin-film transistors with low-temperature process compatibility

被引：1
|
作者：
Park, M. J. [1 ]
Lee, W. H. [1 ]
Kim, K. A. [1 ]
Yun, D. J. [1 ]
Yoon, S. M. [1 ]
机构：
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
来源：
ELECTRONICS LETTERS | 2016年 / 52卷 / 10期
关键词：
thin film transistors; sputter deposition; flexible electronics; bending; stress analysis; indium; gallium; zinc; pressure control; oxygen pressure control; channel sputtering deposition; flexible thin-film transistors; low-temperature process compatibility; flexible TFT; poly(ethylene) naphthalate substrates; oxygen partial pressure; bending situation; robust bias-stress stability; bias-illumination stress stability; temperature; 150; degC; In-Ga-Zn-O; INGAZNO TRANSISTORS; PERFORMANCE;
D O I：
10.1049/el.2016.0339
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effects of oxygen pressure control during the sputtering deposition were investigated to obtain low-temperature process compatibility for flexible In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Device characteristics of the IGZO TFTs fabricated on the poly(ethylene) naphthalate substrates were optimised at an oxygen partial pressure of 2%. Device performances were successfully obtained even at a curvature radius of 2.6 mm under the bending situation. Robust bias-stress and bias-illumination stress stabilities were also confirmed at a process temperature as low as 150 degrees C.
引用
收藏
页码：853 / U75
页数：3
相关论文
共 50 条
  • [41] Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors
    Park, Jeong Woo
    Tak, Young Jun
    Na, Jae Won
    Lee, Heesoo
    Kim, Won-Gi
    Kim, Hyun Jae
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (19) : 16613 - 16622
  • [42] Electrical Properties of Solution-Deposited ZnO Thin-Film Transistors by Low-Temperature Annealing
    Lim, Sang Chul
    Oh, Ji Young
    Koo, Jae Bon
    Park, Chan Woo
    Jung, Soon-Won
    Na, Bock Soon
    Chu, Hye Yong
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (11) : 8665 - 8670
  • [43] High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C
    Dong, Junchen
    Li, Qi
    Yi, Zhuang
    Han, Dedong
    Wang, Yi
    Zhang, Xing
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 10 - 13
  • [44] Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition
    Jeong, Hwan-Seok
    Cha, Hyun-Seok
    Hwang, Seong-Hyun
    Lee, Dong-Ho
    Song, Sang-Hun
    Kwon, Hyuck-In
    COATINGS, 2021, 11 (06)
  • [45] Effect of Sputtering Working Pressure on the Optical and Electrical Properties of InZnO Thin-Film Transistors
    Park, Ji-Min
    Kim, Hyoung-Do
    Jang, Seong Cheol
    Kim, Hyun-Suk
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2020, 30 (04): : 211 - 216
  • [46] Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors
    Li, Zhi-Yue
    Song, Shu-Mei
    Wang, Wan-Xia
    Gong, Jian-Hong
    Tong, Yang
    Dai, Ming-Jiang
    Lin, Song-Sheng
    Yang, Tian-Lin
    Sun, Hui
    NANOTECHNOLOGY, 2023, 34 (02)
  • [47] Direct integration of piezoactuator array with active-matrix oxide thin-film transistors using a low-temperature solution process
    Phan Trong Tue
    Shimura, Reijiro
    Shimoda, Tatsuya
    Takamura, Yuzuru
    SENSORS AND ACTUATORS A-PHYSICAL, 2019, 295 : 125 - 132
  • [48] Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor
    Aikawa, Shinya
    Darmawan, Peter
    Yanagisawa, Keiichi
    Nabatame, Toshihide
    Abe, Yoshiyuki
    Tsukagoshi, Kazuhito
    APPLIED PHYSICS LETTERS, 2013, 102 (10)
  • [49] Combustion-assisted low-temperature solution process for high-performance SnO2 thin-film transistors
    Jang, Bongho
    Jang, Jaewon
    Jang, Jae Eun
    Kwon, Hyuk-Jun
    CERAMICS INTERNATIONAL, 2022, 48 (14) : 20591 - 20598
  • [50] Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors
    Zhao, Tianshi
    Zhao, Chun
    Mitrovic, Ivona Z.
    Lim, Eng Gee
    Yang, Li
    Qiu, Chenghu
    Zhao, Ce Zhou
    2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
12345