Oxygen pressure control during the sputtering deposition of channel for flexible thin-film transistors with low-temperature process compatibility

被引：1
|
作者：
Park, M. J. [1 ]
Lee, W. H. [1 ]
Kim, K. A. [1 ]
Yun, D. J. [1 ]
Yoon, S. M. [1 ]
机构：
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
来源：
ELECTRONICS LETTERS | 2016年 / 52卷 / 10期
关键词：
thin film transistors; sputter deposition; flexible electronics; bending; stress analysis; indium; gallium; zinc; pressure control; oxygen pressure control; channel sputtering deposition; flexible thin-film transistors; low-temperature process compatibility; flexible TFT; poly(ethylene) naphthalate substrates; oxygen partial pressure; bending situation; robust bias-stress stability; bias-illumination stress stability; temperature; 150; degC; In-Ga-Zn-O; INGAZNO TRANSISTORS; PERFORMANCE;
D O I：
10.1049/el.2016.0339
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effects of oxygen pressure control during the sputtering deposition were investigated to obtain low-temperature process compatibility for flexible In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Device characteristics of the IGZO TFTs fabricated on the poly(ethylene) naphthalate substrates were optimised at an oxygen partial pressure of 2%. Device performances were successfully obtained even at a curvature radius of 2.6 mm under the bending situation. Robust bias-stress and bias-illumination stress stabilities were also confirmed at a process temperature as low as 150 degrees C.
引用
收藏
页码：853 / U75
页数：3
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