Step and Flash Imprint Lithography for Semiconductor High Volume Manufacturing?

被引:19
作者
Malloy, M. [1 ]
Litt, L. C. [1 ]
机构
[1] SEMATECH, Albany, NY 12203 USA
来源
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES II | 2010年 / 7637卷
关键词
Nanoimprint; NIL; Step and Flash; SFIL; HVM; UV-NIL;
D O I
10.1117/12.846617
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Step and Flash Imprint Lithography (SFIL), a form of ultraviolet nanoimprint lithography (UV-NIL), is recognized for its resolution and patterning abilities. It is one of the few next generation lithography techniques capable of meeting the resolution requirements of future semiconductor devices. However, many integration issues such as defectivity, throughput, and overlay must be resolved before SFIL can be used for semiconductor high volume manufacturing (HVM). This paper discusses the current status of SFIL, including the process and templates, and shows where more industry collaboration is needed to solve the most critical issues.
引用
收藏
页数:11
相关论文
共 5 条
[1]  
HIGASHIKI T, 2009, SEM JAP PRES
[2]   Polymer imprint lithography with molecular-scale resolution [J].
Hua, F ;
Sun, YG ;
Gaur, A ;
Meitl, MA ;
Bilhaut, L ;
Rotkina, L ;
Wang, JF ;
Geil, P ;
Shim, M ;
Rogers, JA ;
Shim, A .
NANO LETTERS, 2004, 4 (12) :2467-2471
[3]   Mask and wafer cost of ownership (COO) from 65 to 22 nm half-pitch nodes [J].
Hughes, Greg ;
Litt, Lloyd C. ;
Wuest, Andrea ;
Palaiyanur, Shyam .
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XV, PTS 1 AND 2, 2008, 7028
[4]  
KAMIKUBO T, 2009, SPIE, V7488
[5]  
Sasaki Shiho, 2009, P SPIE, V7271