Deposit of carbon nitride films by laser ablation

被引：0

作者：

Soto, R ^{[1
]}

Gonzalez, P ^{[1
]}

Pou, J ^{[1
]}

Leon, B ^{[1
]}

Perez-Amor, M ^{[1
]}

机构：

[1] Univ Vigo, Dipartimento Fis Aplicada, Vigo 36280, Spain

来源：

REVISTA DE METALURGIA | 1998年 / 34卷 / 02期

关键词：

laser ablation; carbon nitride; ammonia photodissociation; excimer laser; thin films;

D O I：

10.3989/revmetalm.1998.v34.i2.667

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The preparation of carbon nitride thin films by ablation of different target compounds (graphite, guanazole) in a reactive atmosphere of ammonia with an ArF excimer laser (193 nm) is reported. The films were deposited on different substrates (silicon wafers and aluminium plates) and were analysed with different techniques such as profilometry, Fourier transform infrared (FTIR) and energy dispersive X-ray spectroscopy (EDX). For both targets, a comparative study of the influence of the ammonia total pressure on the growth rate, composition and properties of the obtained material has been done. A gradual nitrogen incorporation in the films with increasing ammonia pressure and also the presence of nitrogen bonded to carbon in different configurations (simple, double and/or triple bonds) was observed. The use of guanazole targets leads to higher efficiency in the nitrogen incorporation and in the formation of simple C-N bonds.

引用

页码：94 / 97

页数：4

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