Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

被引：9

作者：

Gong, Rumin ^{[1
]}

Wang, Jinyan ^{[1
,2
]}

Dong, Zhihua ^{[1
]}

Liu, Shenghou ^{[1
]}

Yu, Min ^{[1
,2
]}

Wen, Cheng P. ^{[1
]}

Hao, Yilong ^{[1
,2
]}

Shen, Bo ^{[3
]}

Cai, Yong ^{[4
]}

Zhang, Baoshun ^{[4
]}

Zhang, Jincheng ^{[5
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China

[3] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[4] CAS, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

[5] Xidian Univ, Inst Microelect, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 39期

基金：

中国国家自然科学基金;

关键词：

MICROSTRUCTURE; GAN;

D O I：

10.1088/0022-3727/43/39/395102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel stacked Ti/Al based Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au Ohmic contact structure is optimized. Compared with the conventional alloyed Ti/Al/Ni/Au Ohmic contact structure, the novel Ohmic contact structure can obtain much lower contact resistance and specific contact resistivity. Through analysis of x-ray diffraction spectra, cross-section transmission electron microscopy images and corresponding electron dispersive x-ray spectroscopy spectra in the novel stacked Ti/Al based Ohmic structure, the reactions between metals and the AlGaN layer were proven to be stable, uniform and continuous, which produced smooth contact interface. In addition, the top Au layer was prevented from diffusing downwards to the metal/AlGaN interface, which degraded the Ohmic performance.

引用

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