A high-efficiency design for 2.0-2.9 GHz 5-W GaN HEMT Class-E power amplifier using passive Q-constant non-Foster network

被引：7

作者：

Nguyen, Dang-An ^{[1
]}

Seo, Chulhun ^{[1
]}

Park, Kwang S. ^{[2
]}

机构：

[1] Soongsil Univ, Dept Informat Commun Mat & Chem Convergence Techn, Seoul, South Korea

[2] Seoul Natl Univ, Coll Med, Dept Biomed Engn, Seoul, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2020年 / 62卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Class-E power amplifier; distributed elements; GaN HEMT transistor; negative group delay; non-Foster capacitor;

D O I：

10.1002/mop.32068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel load network for designing a high-efficiency broadband Class-E power amplifier, ranging from 2.0 to 2.9 GHz (37% at the central frequency of 2.45 GHz), is proposed using a non-Foster cell that behaves as a negative capacitor with constant quality factor (Q) for optimal fundamental matching over the overall bandwidth. As mathematical analysis, the realization of this element is based on a passive architecture, which exhibits a negative group delay response without constraint of the reference impedance. To improve efficiency in a practical circuit, a close approximation using distributed sections is implemented. The in-band efficiency observed is around 69.0-78.3% with an average of 74% making it the highest for this frequency band today. The output power is maintained in the range of 5-8 W with 12-dB to 14-dB power gain over the band while the two first harmonics are suppressed below -49 dBc.

引用

页码：615 / 624

页数：10

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