Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

被引：0

作者：

Deenapanray, PNK ^{[1
]}

Fu, L

Petravic, M

Jagadish, C

Gong, B

Lamb, RN

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[2] Univ New S Wales, Sch Chem, Surface Sci Ctr & Technol, Sydney, NSW 2052, Australia

来源：

SURFACE AND INTERFACE ANALYSIS | 2000年 / 29卷 / 11期

关键词：

anodic oxidation; GaAs; quantum wen; interdiffusion; defects;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al(0.3)Ga(0.7). As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 degreesC for 60 s was carried out to create atomic interdiffusion, X-ray photoeletron spectroscopy was used to study the anodic oxide both before and after RTA, The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS), The possible mechanisms that generate excess gallium vacancies, V(Ga), during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed. Copyright (C) 2000 John Wiley & Sons, Ltd.

引用

页码：754 / 760

页数：7

共 27 条

[1] CAPPING AND DECAPPING OF MBE GROWN GAAS(001), AL0.5GA0.5AS(001), AND ALAS(001) INVESTIGATED WITH ASP, PES, LEED, AND RHEED [J].