Temperature dependence of MgO/GaN MOSFET performance

被引：8

作者：

Cho, H

Lee, KP

Gila, BP

Abernathy, CR

Pearton, SJ

Ren, F

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Miryang Natl Univ, Dept Mat Engn, Kyungnam 627702, South Korea

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 09期

关键词：

MgO/GaN MOSFET; dc characteristics; temperature dependence; gate breakdown voltage; saturation drain current;

D O I：

10.1016/S0038-1101(03)00089-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The do characteristics of MgO/GaN MOSFETs were simulated over the temperature range 298-773 K using a drift-diffusion model. The saturation drain current decreases by less than a factor of two over this temperature range for a large window of MgO thicknesses (100-800 Angstrom) and gate lengths (0.5-1 mum). Similarly, gate breakdown voltage shows a very weak dependence on temperature, suggesting that the GaN MOSFETs will be well-suited for high temperature applications. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：1601 / 1604

页数：4

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