Synthesis of Graphene and Other 2D Material: The Past and Future of Chemical Vapor Deposition

被引:0
作者
Pei, S. S. [1 ,2 ]
Yu, Q. K. [1 ,2 ]
Huang, K. P. [3 ]
Xing, S. R. [1 ,2 ]
Chang, S. C. [1 ,2 ]
Ebrahim, R. [1 ,2 ]
Mansurov, F. [4 ]
机构
[1] Univ Houston, Ctr Adv Mat, Houston, TX 77096 USA
[2] Univ Houston, Dept Elect & Comp Engn, Houston, TX 77096 USA
[3] ITRI, Adv Machinery Technol Div, Mech & Syst Res Labs, Hsinchu, Taiwan
[4] Al Farabi Kazakh Natl Univ, Inst Combust Problems, Alma Ata, Kazakhstan
来源
2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2015年
关键词
2D materials; chemical vapor deposition; graphene; nanotechnology; GRAIN-BOUNDARIES; LARGE-AREA; GROWTH; FILMS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Over the past seven years, chemical vapor deposition has emerged as the preferred technique for the synthesis of graphene films on metal as well as other substrates. Commercial cell phones with a graphene touch screen have been introduced and roll-to-roll production tools have been demonstrated. The deposition temperature is also reduced from >1000 degrees C to similar to 400 degrees C with a plasma-enhanced process. For device applications, a seeded growth of single-crystal graphene at predetermined location technique has been developed to avoid the detrimental effects of the grain boundaries. The application of chemical vapor deposition and seeded growth to transition metal dichalcogenides is now under investigation.
引用
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页码:135 / 137
页数:3
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