Electron capture and emission dynamics of self-assembled quantum dots far from equilibrium with the environment

被引：4
作者：
Schnorr, L. [1 ]
Labes, J. [1 ]
Kuerten, L. [1 ]
Heinzel, T. [1 ]
Rothfuchs-Engels, C. [2 ]
Scholz, S. [2 ]
Ludwig, A. [2 ]
Wieck, A. D. [2 ]
机构：
[1] Heinrich Heine Univ Dusseldorf, Solid State Phys Lab, D-40204 Dusseldorf, Germany
[2] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany
来源：
PHYSICAL REVIEW B | 2021年 / 104卷 / 03期
关键词：
LEVEL-TRANSIENT SPECTROSCOPY; GAAS; INGAAS; TRAPS;
D O I：
10.1103/PhysRevB.104.035303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron transfer dynamics between self-assembled quantum dots and their environment are measured under nonequilibrium conditions by time-dependent capacitance spectroscopy. The quantum dots are embedded in a wide spacer, which inhibits elastic tunneling to or from the reservoirs. At certain bias voltages, electron capture and emission are both significant. A rate equation model is used to determine the corresponding transfer rates and the average occupation numbers of the dots as a function of the bias voltage.
引用
收藏
页数：7
相关论文
共 43 条
  • [1] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF INP QUANTUM DOTS
    ANAND, S
    CARLSSON, N
    PISTOL, ME
    SAMUELSON, L
    SEIFERT, W
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (20) : 3016 - 3018
  • [2] Time-resolved transconductance spectroscopy on self-assembled quantum dots: Spectral evolution from single- into many-particle states
    Beckel, A.
    Ludwig, A.
    Wieck, A. D.
    Lorke, A.
    Geller, M.
    [J]. PHYSICAL REVIEW B, 2014, 89 (15):
  • [3] Electronic structure of self-assembled InAs quantum dots in GaAs matrix
    Brounkov, PN
    Polimeni, A
    Stoddart, ST
    Henini, M
    Eaves, L
    Main, PC
    Kovsh, AR
    Musikhin, YG
    Konnikov, SG
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1092 - 1094
  • [4] DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS
    DAY, DS
    TSAI, MY
    STREETMAN, BG
    LANG, DV
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5093 - 5098
  • [5] LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS
    DOBACZEWSKI, L
    KACZOR, P
    HAWKINS, ID
    PEAKER, AR
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 194 - 198
  • [6] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS
    DREXLER, H
    LEONARD, D
    HANSEN, W
    KOTTHAUS, JP
    PETROFF, PM
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (16) : 2252 - 2255
  • [7] Eaton JW, 2020, GNU OCTAVE VERSION 5
  • [8] Electron tunneling from quantum dots characterized by deep level transient spectroscopy
    Engstrom, O.
    Kaniewska, M.
    Kaczmarczyk, M.
    Jung, W.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [9] Integrated quantum optical networks based on quantum dots and photonic crystals
    Faraon, Andrei
    Majumdar, Arka
    Englund, Dirk
    Kim, Erik
    Bajcsy, Michal
    Vuckovic, Jelena
    [J]. NEW JOURNAL OF PHYSICS, 2011, 13
  • [10] Electron emission in intense electric fields
    Fowler, RH
    Nordheim, L
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) : 173 - 181
12345