High pressure synthesis of Te-doped CoSb3 with enhanced thermoelectric performance

被引：22

作者：

Zhang, Qian ^{[1
]}

Li, Xiaohui ^{[1
]}

Kang, Yulong ^{[1
]}

Zhang, Long ^{[1
]}

Yu, Dongli ^{[1
]}

He, Julong ^{[1
]}

Liu, Zhongyuan ^{[1
]}

Tian, Yongjun ^{[1
]}

Xu, Bo ^{[1
]}

机构：

[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 01期

基金：

美国国家科学基金会;

关键词：

TRANSPORT-PROPERTIES; SKUTTERUDITES;

D O I：

10.1007/s10854-014-2411-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Te-doped CoSb3 skutterudites were successfully synthesized with high pressure synthesis method followed by spark plasma sintering. The introducing of Te atoms into the lattice sites of CoSb3 resulted in n-type electrical conductivity, which increased with elevated Te doping level. An enhanced power factor, larger than 4,000 A mu Wm(-1)K(-2) for temperatures higher than 650 K, was observed for Co4Sb11.5Te0.5. This is a significant value for skutterudites substituted with a single element. Meanwhile, the thermal conductivity of Te-doped CoSb3 was greatly suppressed due to stronger electron-phonon scattering. The optimized Co4Sb11.5Te0.5 showed a ZT value of 1.15 at 883 K, which rivals the state-of-the-art single elemental filled skutterudites.

引用

收藏

页码：385 / 391

页数：7

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