Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

被引：26

作者：

Akasaka, Tetsuya ^{[1
]}

Kobayashi, Yasuyuki ^{[1
]}

Kasu, Makoto ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 14期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.3497017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nucleus and spiral growth mechanisms of GaN were experimentally studied by varying the degree of supersaturation, sigma, in selective-area metal organic vapor phase epitaxy. The spiral growth rate of GaN increased proportionally to sigma(2) in the sigma range from 0.0632 to 0.230. The nucleus growth rate of GaN was much smaller than the spiral one in the sigma range. The nucleation rate was almost zero at sigma lower than 0.130, suddenly increased at higher sigma values, and reached similar to 10(7) cm(-2) s(-1) at sigma of 0.230. These results are consistent with a theoretical analysis [W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. London, Ser. A 243, 299 (1951)]. (C) 2010 American Institute of Physics. [doi:10.1063/1.3497017]

引用

页数：3

共 12 条

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