Electron-ion recombination of SiIV forming SiIII:: Storage-ring measurement and multiconfiguration dirac-fock calculations

被引：26
作者：
Schmidt, E. W.
Bernhardt, D.
Mueller, A.
Schippers, S.
Fritzsche, S.
Hoffmann, J.
Jaroshevich, A. S.
Krantz, C.
Lestinsky, M.
Orlov, D. A.
Wolf, A.
Lukic, D.
Savin, D. W.
机构：
[1] Univ Giessen, Inst Atom & Mol Phys, D-35392 Giessen, Germany
[2] Univ Kassel, Inst Phys, D-34132 Kassel, Germany
[3] Max Planck Inst Kernphys, D-69117 Heidelberg, Germany
[4] Columbia Univ, Columbia Astrophys Lab, New York, NY 10027 USA
[5] Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
PHYSICAL REVIEW A | 2007年 / 76卷 / 03期
关键词：
D O I：
10.1103/PhysRevA.76.032717
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6)nln'l' dielectronic recombination (DR) resonances associated with 3s -> nl core excitations, 2s2p(6)3snln'l' resonances associated with 2s -> nl (n = 3,4) core excitations, and 2p(5)3snln'l' resonances associated with 2p -> nl (n = 3, . . ., infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s -> 3pn'l' and 3s -> 3dn'l' (both n' = 3, . . ., 6) and 2p(5)3s3ln'l' (n' = 3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.
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