Electron-ion recombination of SiIV forming SiIII:: Storage-ring measurement and multiconfiguration dirac-fock calculations

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6)nln'l' dielectronic recombination (DR) resonances associated with 3s -> nl core excitations, 2s2p(6)3snln'l' resonances associated with 2s -> nl (n = 3,4) core excitations, and 2p(5)3snln'l' resonances associated with 2p -> nl (n = 3, . . ., infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s -> 3pn'l' and 3s -> 3dn'l' (both n' = 3, . . ., 6) and 2p(5)3s3ln'l' (n' = 3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.