Dielectric Properties of SrMnO3-doped K0.5Na0.5NbO3 Lead-Free Ceramics

被引：16

作者：

Deng, Jianming ^{[1
]}

Sun, Xiaojun ^{[1
]}

Liu, Laijun ^{[1
]}

Liu, Saisai ^{[1
]}

Huang, Yanmin ^{[1
]}

Fang, Liang ^{[1
]}

Elouadi, Brahim ^{[2
]}

机构：

[1] Guilin Univ Technol, Guangxi Univ Key Lab Nonferrous Met Oxide Elect F, Key Lab Nonferrous Mat & New Proc Technol, Coll Mat Sci & Engn,Minist Educ, Guilin 541004, Peoples R China

[2] Univ La Rochelle, Lab Chem Anal Elaborat & Mat, Engn LEACIM, Ave Michel Crepeau, F-17042 La Rochelle 01, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2016年 / 45卷 / 08期

关键词：

Ceramics; electronic materials; electrochemical techniques; defect; dielectric properties; ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; FERROELECTRIC CERAMICS; DEFECT CHEMISTRY; SINGLE-CRYSTALS; CONSTANT; PIEZOCERAMICS; CACU3TI4O12; RELAXATION;

D O I：

10.1007/s11664-016-4595-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(1-x)K0.5Na0.5NbO3-xSrMnO3 (0.02 <= x <= 0.08) (KNN-xSM) ceramics were fabricated by a conventional solid-state technique. X-ray diffraction of the samples revealed that the crystal structure changes from orthorhombic to tetragonal, and finally to pseudocubic symmetry with increasing x. Temperature dependence of dielectric properties showed that the temperature (T-m) corresponding to the maximum of dielectric permittivity decreased with increasing x. Two dielectric relaxation processes occurred at high temperatures, which were attributed to grain and grain boundary responses, respectively. Polarization hysteresis loops (P-E) at different electrical fields were displayed. P-rmax degenerated with the increase of SM due to the thermally activated leakage current increases. The relationship between electrical properties and defect compensation mechanism is discussed.

引用

页码：4089 / 4099

页数：11

共 37 条

[1] FORCE-CONSTANT AND EFFECTIVE MASS OF 90-DEGREES DOMAIN-WALLS IN FERROELECTRIC CERAMICS [J].