InAsN/GaAsN quantum dots grown on GaAs substrate by solid source MBE

被引：0
|
作者：
Sun, ZZ [1 ]
Fatt, YS [1 ]
Chuin, YK [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
lnAsN/GaAsN quantum dots were gown on GaAs substrate by MBE. Structure and optical properties of single layer and multilayer dots were characterized and analyzed by photoluminescence and atomic force microscopy. High density InAsN dot (1.1 x 10(11)cm(-2)) is achieved. Multilayer is found to increase the emission wavelength to 1120nm with the effect of electron state couple between dots in different layers.
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页码：448 / 451
页数：4
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