The effects of boron content in the target of pulsed laser deposition on the properties of boron doped amorphous carbon thin films

被引:3
作者
Rusop, M [1 ]
Tian, XM
Kinugawa, T
Soga, T
Jimbo, T
Umeno, M
机构
[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Chubu Univ, Fac Engn, Dept Elect Engn, Kasugai, Aichi 4878501, Japan
来源
MODERN PHYSICS LETTERS B | 2004年 / 18卷 / 26-27期
关键词
precursor; camphoric carbon target; graphite target; boron doping; PLD;
D O I
10.1142/S0217984904007906
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of boron content in camphoric carbon (CC) and graphite target of pulsed laser deposition (PLD) prepared in vacuum at room temperature on the properties of boron doped amorphous carbon (a-C:B) thin films has been studied. Deposited a-C:B films have been investigated using standard measurement techniques and the effects of B weight percentages (Bwt%) in the target are discussed. The variation of surface morphology, bonding and structural properties, as well as the optical gap (E.) and electrical resistivity (rho) of a-C:B films deposited using a CC target are related to the successful doping of B for low B content in the amorphous carbon (a-C) films as the structure and E-g remain almost unchanged, and the p decreased for the film deposited using graphite target with B powder up to 10 Bwt%. Since both E-g, and rho decreased sharply with higher Bwt%, this phenomenon may be due to graphitization. For a-C:B films deposited using graphite target with low B content at 1 and 3 Bwt%, as the E-g is observed to increase only slightly when compared with undoped a-C films and with the decrease of rho, we speculated that the B incorporation induced successful of doping is responsible for the decrease in rho.
引用
收藏
页码:1379 / 1393
页数:15
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