Over 10GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process

被引：28

作者：

Li, Gen ^{[1
]}

Maekita, Kazuaki ^{[1
]}

Mitsuno, Hiroya ^{[1
]}

Maruyama, Takeo ^{[1
]}

Iiyama, Koichi ^{[1
]}

机构：

[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9201192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 04期

关键词：

HIGH-SPEED; STANDARD CMOS; OPTICAL RECEIVER; AVALANCHE PHOTODETECTOR; TECHNOLOGY; PHOTODIODE; PHOTORECEIVER; DETECTOR;

D O I：

10.7567/JJAP.54.04DG06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a design and implementation of lateral silicon photodetectors fabricated on a silicon-on-insulator (SOI) substrate in a complementary CMOS-compatible process. In addition, we disscuss the structure dependences on the frequency and optimum design for a maximum bandwidth. A standard device fabricated with a 210nm absorbing layer, a finger width of 1.00 mu m, a finger spacing of 1.63 mu m, a square detector area of 20 x 20 mu m(2), and a pad size of 60 x 60 mu m(2) achieved a bandwidth of 12.6GHz at a bias voltage of 10 V, with a responsivity of 7.5mA/Wat 850nm wavelength. A photodetector with the same geometry, which was fabricated with a smaller pad size of 30 x 30 mu m(2), exhibited a bandwidth of 13.6GHz. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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