Origin of metallic states at the heterointerface between the band insulators LaAlO3 and SrTiO3

被引：137

作者：

Yoshimatsu, K. ^{[1
]}

Yasuhara, R. ^{[1
]}

Kumigashira, H. ^{[1
,2
]}

Oshima, M. ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy, CREST, Bunkyo Ku, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.101.026802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the electronic structure at the heterointerface between the band insulators LaAlO(3) and SrTiO(3) using in situ photoemission spectroscopy. Our experimental results clearly reveal the formation of a notched structure on the SrTiO(3) side due to band bending at the metallic LaAlO(3)/TiO(2)-SrTiO(3) interface. The structure, however, is absent at the insulating LaAlO(3)/SrO-SrTiO(3) interface. The present results indicate that the metallic states originate not from the charge transfer through the interface on a short-range scale but from the accumulation of carriers on a long-range scale.

引用

页数：4

共 22 条

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