Cross talk by extensive domain wall motion in arrays of ferroelectric nanocapacitors

被引:10
作者
Kim, Yunseok [1 ]
Han, Hee [2 ]
Vrejoiu, Ionela [1 ]
Lee, Woo [2 ]
Hesse, Dietrich [1 ]
Alexe, Marin [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany
[2] KRISS, Taejon 305340, South Korea
关键词
NANOSCALE; DYNAMICS;
D O I
10.1063/1.3661166
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls start to propagate into the neighbouring capacitors initiating a significant cross-talk. The propagation paths and the propagated area into the neighbouring capacitors were always the same under repeated runs. The experimental and the simulated results show that the observed cross-talk is related to the capacitor parameters combined with local defects. The results can be helpful to test the reliability of nanoscale ferroelectric memory devices. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3661166]
引用
收藏
页数:3
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