Reduction of Particle Contamination in Plasma-Etching Equipment by Dehydration of Chamber Wall

被引：87

作者：

Ito, Natsuko ^{[1
]}

Moriya, Tsuyoshi ^{[1
]}

Uesugi, Fumihiko ^{[1
]}

Matsumoto, Masao ^{[2
]}

Liu, Shenjian ^{[3
]}

Kitayama, Yoshihiko ^{[2
]}

机构：

[1] NEC Elect Corp, Test & Anal Engn Div, Kawasaki, Kanagawa 2118668, Japan

[2] Lam Res Co Ltd, Kanagawa 2291105, Japan

[3] Lam Res Corp, Fremont, CA 94538 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 05期

关键词：

dehydration; H(2)O; etching; plasma; particle; AlF(3); laser light scattering; transportation; generation;

D O I：

10.1143/JJAP.47.3630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of particle generation is investigated in order to prevent defects formed on wafers in the plasma etching of multi-layered films composed of tungsten silicide (WSi) and polycrystalline silicon (poly-Si). Particles are measured by an in situ monitoring system using laser light scattering during the etching process. The particles are composed of AlF(3), which is presumably generated by reacting the coating material Al(2)O(3) on the etching chamber wall with plasma containing fluorine atoms, F in the presence of H(2)O absorbed into the chamber parts and materials. We demonstrated successfully that dehydration of the chamber parts and materials by plasma discharge suppresses particle generation. [DOI: 10.1143/JJAP.47.3630]

引用

页码：3630 / 3634

页数：5

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