VLSI Design of a 5th-order Gm-C Low-Pass Active Filter in CMOS Technology

被引:0
|
作者
Zara, Aurica [1 ]
Bozomitu, Radu Gabriel [1 ]
机构
[1] Gheorghe Asachi Tech Univ, Fac Elect Telecommun & Informat Technol, Iasi, Romania
来源
2021 IEEE 27TH INTERNATIONAL SYMPOSIUM FOR DESIGN AND TECHNOLOGY IN ELECTRONIC PACKAGING (SIITME 2021) | 2021年
关键词
biquad CMOS; G(m)-C filter; operational transconductance amplifier; VLSI;
D O I
10.1109/SIITME53254.2021.9663685
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper a VLSI design of a 5th order differential G(m)-C low-pass active filter in CMOS technology and for different approximations is presented. The circuit architecture includes a first order G(m)-C structure, two biquadtype structures and grounded capacitors. In order to increase the output swing, the active element used in the filter structure is based on a fully differential folded-cascode operational transconductance amplifier. The cutoff frequency of the proposed filter can be tuned through an external DC bias current around the 27 MHz frequency. The paper presents the complete design of a 5th order differential G(m)-C low-pass active filter from the electric schematic to the layout implementation in a 0.18 mu m CMOS technology. The pre-layout and post-layout simulations confirm the theoretical results.
引用
收藏
页码:197 / 200
页数:4
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