Intrinsic Dirac half-metal and quantum anomalous Hall phase in a hexagonal metal-oxide lattice

被引:228
作者
Zhang, Shou-juan [1 ]
Zhang, Chang-wen [1 ]
Zhang, Shu-feng [1 ]
Ji, Wei-xiao [1 ]
Li, Ping [1 ]
Wang, Pei-ji [1 ]
Li, Sheng-shi [2 ]
Yan, Shi-shen [2 ]
机构
[1] Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
AUGMENTED-WAVE METHOD; TOPOLOGICAL INSULATOR; MONOLAYER; GRAPHENE; SCHEMES;
D O I
10.1103/PhysRevB.96.205433
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The quantum anomalous Hall (QAH) effect has attracted extensive attention due to time-reversal symmetry broken by a staggered magnetic flux emerging from ferromagnetic ordering and spin-orbit coupling. However, the experimental observations of the QAH effect are still challenging due to its small nontrivial bulk gap. Here, based on density functional theory and Berry curvature calculations, we propose the realization of intrinsic QAH effect in two-dimensional hexagonal metal-oxide lattice, Nb2O3, which is characterized by the nonzero Chern number (C = 1) and chiral edge states. Spin-polarized calculations indicate that it exhibits a Dirac half-metal featurewith temperature as large as T-C = 392Kusing spin-wave theory. When the spin-orbit coupling is switched on, Nb2O3 becomes a QAH insulator. Notably, the nontrivial topology is robust against biaxial strain with its band gap reaching up to E-g = 75 meV, which is far beyond room temperature. A tight-binding model is further constructed to understand the origin of nontrivially electronic properties. Our findings on the Dirac half-metal and room-temperature QAH effect in the Nb2O3 lattice can serve as an ideal platform for developing future topotronics devices.
引用
收藏
页数:11
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