New process for synthesis of nickel oxide thin films and their characterization

被引:32
作者
Raut, B. T. [1 ]
Pawar, S. G. [1 ]
Chougule, M. A. [1 ]
Sen, Shashwati [2 ]
Patil, V. B. [1 ]
机构
[1] Solapur Univ, Sch Phys Sci, Mat Res Lab, Solapur 413255, MS, India
[2] Bhabha Atom Res Ctr, Crystal Technol Sect, Mumbai 400085, Maharashtra, India
关键词
Nickel oxide; Sol-gel method; Structural properties; Optoelectronic properties; OPTICAL-PROPERTIES; ELECTROCHROMIC PROPERTIES; DEPOSITION; TRANSPARENT; NIO;
D O I
10.1016/j.jallcom.2011.06.029
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Sol-gel spin coating method has been successfully employed for the deposition of nanocrystalline nickel oxide (NiO) thin films. The films were annealed at 400-700 degrees C for 1 h in an air and changes in the structural, morphological, electrical and optical properties were studied. The structural properties of nickel oxide films were studied by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD analysis shows that all the films are crystallized in the cubic phase and present a random orientation. Surface morphology of the nickel oxide film consists of nanocrystalline grains with uniform coverage of the substrate surface with randomly oriented morphology. The electrical conductivity showed the semi-conducting nature with room temperature electrical conductivity increased from 10(-4) to 10(-2) (Omega cm)(-1) after annealing. The decrease in the band gap energy from 3.86 to 3.47 eV was observed after annealing NiO films from 400 to 700 degrees C. These mean that the optical quality of NiO films is improved by annealing. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:9065 / 9070
页数:6
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