Free-Standing GaN-Based Photonic Crystal Band-Edge Laser

被引：49
作者：
Kim, Dong-Uk [1 ,2 ]
Kim, Sunghwan [1 ,2 ]
Lee, Jeongkug [1 ,2 ]
Jeon, Seong-Ran [4 ]
Jeon, Heonsu [1 ,3 ]
机构：
[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151747, South Korea
[3] Seoul Natl Univ, Dept Biophys & Chem Biol, Seoul 151747, South Korea
[4] Korea Photon Technol Inst, Kwangju 500779, South Korea
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 20期
基金：
新加坡国家研究基金会;
关键词：
Band-edge laser; GaN; photonic crystals; semiconductor laser; surface emission; LIGHT-EMITTING-DIODES;
D O I：
10.1109/LPT.2011.2162944
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication of a GaN-based membrane-type photonic crystal (PC) band-edge laser (BEL) that requires a smaller PC active area than previous designs due to strong field confinement. A honeycomb-lattice PC was designed such that the Gamma(1) monopole band-edge mode fell within the emission band of InGaN quantum wells. The BEL exhibited pulsed lasing at room-temperature when optically pumped above its threshold pump energy density of similar to 15.5 mJ/cm(2). Based on polarization angle analysis, we confirmed that the BEL indeed lased at the Gamma(1) monopole band-edge mode.
引用
收藏
页码：1454 / 1456
页数：3
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