共 50 条
- [43] Numerical simulation of energy balance equations in AlGaAs/GaAs p-i-n diodes with single quantum wells PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII, 1999, 3625 : 543 - 551
- [44] Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1299 - 1301
- [45] DIRECT GROWTH OF ALGAAS/GAAS SINGLE QUANTUM-WELLS ON GAAS SUBSTRATES CLEANED BY ELECTRON-CYCLOTRON-RESONANCE (ECR) HYDROGEN PLASMA JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (1B): : L91 - L93
- [47] Optically detected extended x-ray absorption fine structure study of InGaN/GaN single quantum wells PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1503 - +
- [49] Non-radiative recombination in irradiated GaAs/AlGaAs multiple quantum wells. ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 449 - 453