Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

被引：43

作者：

Ranga, Praneeth ^{[1
]}

Bhattacharyya, Arkka ^{[1
]}

Rishinaramangalam, Ashwin ^{[2
]}

Ooi, Yu Kee ^{[1
]}

Scarpulla, Michael A. ^{[1
,3
]}

Feezell, Daniel ^{[2
]}

Krishnamoorthy, Sriram ^{[1
]}

机构：

[1] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA

[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[3] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 04期

关键词：

Delta Doping; Modulation Doping; gallium oxide; heterostructures; FIELD-EFFECT TRANSISTORS; SI; SEMICONDUCTORS; VOLTAGE; MOVPE;

D O I：

10.35848/1882-0786/ab7712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the silicon delta doping of metalorganic vapor-phase epitaxy grown beta-Ga2O3 thin films using silane as a precursor. The delta-doped beta-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. The sheet charge density is in the range of 2.9 x 10(12) cm(-2) to 9 x 10(12) cm(-2) with an HWHM (towards the substrate) ranging from 3.5 nm to 6.2 nm. We also demonstrate a high-density (n(s): 6.4 x 10(12) cm(-2)) degenerate electron sheet charge in a delta-doped beta-(Al0.26Ga0.74)(2)O-3/beta-Ga2O3 heterostructure. The total charge could also include a contribution from a parallel channel in the beta-(Al0.26Ga0.74)(2)O-3 alloy barrier.

引用

页数：5

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