Co-optimization of fault tolerance, wirelength and temperature mitigation in TSV-based 3D ICs

被引:0
|
作者
Zhao, Yi [1 ]
Khursheed, Saqib [2 ]
Al-Hashimi, Bashir M. [3 ]
Zhao, Zhiwen [1 ]
机构
[1] Beijing Normal Univ, Zhuhai, Peoples R China
[2] Univ Liverpool, Liverpool L69 3BX, Merseyside, England
[3] Univ Southampton, Southampton SO9 5NH, Hants, England
来源
2016 IFIP/IEEE INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC) | 2016年
基金
英国工程与自然科学研究理事会;
关键词
TSV; thermal management; fault tolerance; reliability; simulated annealing; DESIGN ISSUES;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TSV failures due to manufacturing defects and thermal-induced latent defects result in yield and reliability issues in 3D-ICs. Recent work has shown different temperature mitigation techniques and fault tolerant architectures for 3D-ICs. It is known that TSVs are effective in reducing temperature by providing thermal conductivity. This is the first work that jointly considers temperature mitigation and fault tolerance for TSV based 3D ICs without introducing additional redundant TSVs (also called dummy TSVs). By reusing and carefully placing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs, temperature is reduced without affecting fault tolerance capability. The proposed technique consists of two steps: first is TSV determination step, which provides optimised allocation of regular and spare TSVs in groups to achieve expected repair capability. The second step is TSV placement, where, for the first time, temperature mitigation is addressed when considering TSVs impact on both vertical and horizontal heat flow. Meanwhile routing difference and total wirelength can be co-optimized. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 33% (best case is 58.2%), while the wirelength may slightly increase depending on assumed TSV fault rate.
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页数:6
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