Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries

被引：10

作者：

Park, Jaehoon ^{[1
]}

Jeong, Ye-Sul ^{[1
]}

Park, Kun-Sik ^{[1
]}

Do, Lee-Mi ^{[1
]}

Bae, Jin-Hyuk ^{[2
]}

Choi, Jong Sun ^{[3
]}

Pearson, Christopher ^{[4
]}

Petty, Michael ^{[4
]}

机构：

[1] Elect & Telecommun Res Inst, RFID USN Res Dept, Taejon 305700, South Korea

[2] Ecole Natl Super Mines, Microelect Ctr Provence, Dept Bioelect, F-13541 Gardanne, France

[3] Hongik Univ, Dept Elect Informat & Control Engn, Seoul 121791, South Korea

[4] Univ Durham, Ctr Mol & Nanoscale Elect, Sch Engn & Comp Sci, Durham DH1 3LE, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 10期

关键词：

THIN-FILM TRANSISTORS; ELECTRICAL CHARACTERISTICS; SURFACE; PERFORMANCE; MORPHOLOGY; MOBILITY; VOLTAGE; GROWTH;

D O I：

10.1063/1.4721676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Grain boundaries in polycrystalline pentacene films significantly affect the electrical characteristics of pentacene field-effect transistors (FETs). Upon reversal of the gate voltage sweep direction, pentacene FETs exhibited hysteretic behaviours in the subthreshold region, which was more pronounced for the FET having smaller pentacene grains. No shift in the flat-band voltage of the metal-insulator-semiconductor capacitor elucidates that the observed hysteresis was mainly caused by the influence of localized trap states existing at pentacene grain boundaries. From the results of continuous on/off switching operation of the pentacene FETs, hole depletion during the off period is found to be limited by pentacene grain boundaries. It is suggested that the polycrystalline nature of a pentacene film plays an important role on the dynamic characteristics of pentacene FETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721676]

引用

页数：6

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