DC electroluminescence from PECVD grown thin films of silicon-rich silica

被引：11
作者：
Trwoga, PF
Kenyon, AJ
Pitt, CW
机构：
[1] Department of Electronic Engineering, University College London, London WC1E 7JE, Torrington Place
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 18期
关键词：
electroluminescence; semiconductor thin films;
D O I：
10.1049/el:19961122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the fabrication of an electroluminescent MOS device using microclustered silicon in silica as the active layer. A DC electroluminescence spectrum is shown and compared with photoluminescence from the same material. A current-voltage curve is presented which shows weak rectifying behaviour and is consistent with a space-charge limited structure with a high resistivity layer.
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收藏
页码：1703 / 1704
页数：2
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