Comparison of thermal and mass-transport properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD precursors

被引:9
作者
Bedoya, C
Condorelli, GG
Finocchiaro, ST
Di Mauro, A
Fragalà, IL
Cattaneo, L
Carella, S
机构
[1] Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy
[2] SAES Getters SpA, I-20020 Lainate, Italy
关键词
bismuth tetramethyl-heptanedionate; FTIR; MOCVD; thermal analysis; toluene bismuth;
D O I
10.1002/cvde.200406355
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Metal-organic (MO)CVD processes using three different precursors (Bi(tmhd)(3), Bi(p-tol)(3), and Bi(o-tol)(3)) have been investigated. Combined, thermal, and mass spectroscopic investigations have provided information on their thermal robustness during sublimation processes. In-situ Fourier-transform infrared (FTIR) measurements have allowed the monitoring of mass-transported precursors during MOCVD experiments. Temperature windows of 190-277 degrees C, 170-270 degrees C, and 150-220 degrees C have proved suitable for the efficient vaporization of Bi(tmhd)(3), Bi(p-tol)(3), and Bi(o-tol)(3), respectively, even though aryl precursors have proved to be more stable than beta-diketonate during the sublimation and transport processes. Above 350 degrees C, decomposition during the MOCVD processes has been observed for all the precursors. In the case of Bi(tmhd)3 and Bi(o-tol)(3) it involves the ligand fragmentation, while for Bi(P-tol)(3), dissociation of the intact aryl ring seems to occur.
引用
收藏
页码:261 / 268
页数:8
相关论文
共 64 条
[1]  
Armelao L, 1998, INORG CHIM ACTA, V276, P340
[2]   A chemical vapour deposition route to MoO3-Bi2O3 thin films [J].
Barreca, D ;
Rizzi, GA ;
Tondello, E .
THIN SOLID FILMS, 1998, 333 (1-2) :35-40
[3]   Molecular oxygen interaction with Bi2O3:: a spectroscopic and spectromagnetic investigation [J].
Barreca, D ;
Morazzoni, F ;
Rizzi, GA ;
Scotti, R ;
Tondello, E .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2001, 3 (09) :1743-1749
[4]   Fluorine-free and fluorine containing MOCVD precursors for electronic oxides:: a comparison [J].
Bedoya, C ;
Condorelli, GG ;
Di Mauro, A ;
Anastasi, G ;
Fragalà, IL ;
Lisoni, JG ;
Wouters, D .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3) :264-269
[5]   MOCVD of bismuth oxides:: Transport properties and deposition mechanisms of the Bi(C6H5)3 precursor [J].
Bedoya, C ;
Condorelli, GG ;
Anastasi, G ;
Baeri, A ;
Scerra, F ;
Fragalà, IL ;
Lisoni, JG ;
Wouters, D .
CHEMISTRY OF MATERIALS, 2004, 16 (16) :3176-3183
[6]   OMCVD OF THIN-FILMS FROM METAL DIKETONATES AND TRIPHENYLBISMUTH [J].
BERRY, AD ;
HOLM, RT ;
FATEMI, M ;
GASKILL, DK .
JOURNAL OF MATERIALS RESEARCH, 1990, 5 (06) :1169-1175
[7]  
Bu SD, 2000, J KOREAN PHYS SOC, V36, pL9
[8]   MASS-SPECTROMETRIC STUDY OF THERMAL-STABILITY OF COPPER(II) BIS(DIPIVALOYLMETHANATE) VAPOR [J].
BYKOV, AF ;
SEMYANNIKOV, PP ;
IGUMENOV, IK .
JOURNAL OF THERMAL ANALYSIS, 1992, 38 (06) :1463-1475
[9]   Evidence for PT-ferroelectries interface scenario of different fatigue behaviors between Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin film capacitors [J].
Chu, MW ;
Ganne, M ;
Tessier, PY ;
Eon, D ;
Caldes, MT ;
Brohan, L .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (2-3) :179-182
[10]  
COLTHUP NB, 1964, INTRO INFRARED RAMAN, P220