Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy

被引：11

作者：

Drachenko, O. ^{[2
]}

Patane, A. ^{[1
]}

Kozlova, N. V. ^{[3
]}

Zhuang, Q. D. ^{[4
]}

Krier, A. ^{[4
]}

Eaves, L. ^{[1
]}

Helm, M. ^{[2
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Helmholtz Zentrum Dresden Rossenorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[3] IFW Dresden, Inst Metall Mat, D-01171 Dresden, Germany

[4] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

NITROGEN;

D O I：

10.1063/1.3583378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs(1-x)N(x) grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583378]

引用

页数：3

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