Catalyst-free growth of Sb2Te3 nanowires

被引：4
|
作者：
Kim, Byeong Geun [1 ]
Kim, Byung-Sung [2 ]
Jeong, Seong-Min [3 ]
Choi, Soon-Mok [3 ]
Whang, Dongmok [2 ]
Lee, Hong-Lim [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea
[3] KICET, Seoul 153801, South Korea
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 05期
关键词：
Nanocrystalline materials; Semiconductors; Sputtering; Thin films; GE2SB2TE5; FILMS; MEMORY;
D O I：
10.1016/j.matlet.2010.12.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, a catalyst-free growth method was discovered to prepare the high-quality single crystal Sb2Te3 nanowires from the Al:Ge:Sb:Te thin films. The diameters of Sb2Te3 nanowires were found to be similar to 100 nm and their lengths were as great as tens of micrometers. The Al content and the annealing temperature play an important role in the growth of Sb2Te3 nanowires. When the Al content (>12.4 at.%) was sufficiently contained in Al:Ge:Sb:Te film, Sb2Te3 nanowires were extruded spontaneously on the surface of thin film with increase in annealing temperatures. Compared with the vapor-liquid-solid method, our method has advantages of low temperature (similar to 300 degrees C) and no impurities, such as a metal catalyst. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：812 / 814
页数：3
相关论文
共 50 条
  • [31] ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3
    Longo, Emanuele
    Mantovan, Roberto
    Cecchini, Raimondo
    Overbeek, Michael D.
    Longo, Massimo
    Trevisi, Giovanna
    Lazzarini, Laura
    Tallarida, Graziella
    Fanciulli, Marco
    Winter, Charles H.
    Wiemer, Claudia
    NANO RESEARCH, 2020, 13 (02) : 570 - 575
  • [32] Enhancement of thermoelectric efficiency in vapor deposited Sb2Te3 and Sb1.8In0.2Te3 crystals
    Thankamma, G.
    Kunjomana, A. G.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2014, 49 (04): : 212 - 219
  • [33] Sputtered p-Type Sb2Te3/(Bi,Sb)2Te3 Soft Superlattices Created by Nanoalloying
    M. Winkler
    X. Liu
    J. D. König
    L. Kirste
    H. Böttner
    W. Bensch
    L. Kienle
    Journal of Electronic Materials, 2012, 41 : 1322 - 1331
  • [34] Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition
    Kumar, Arun
    Cecchini, Raimondo
    Wiemer, Claudia
    Mussi, Valentina
    De Simone, Sara
    Calarco, Raffaella
    Scuderi, Mario
    Nicotra, Giuseppe
    Longo, Massimo
    NANOMATERIALS, 2021, 11 (12)
  • [35] Sputtered p-Type Sb2Te3/(Bi,Sb)2Te3 Soft Superlattices Created by Nanoalloying
    Winkler, M.
    Liu, X.
    Koenig, J. D.
    Kirste, L.
    Boettner, H.
    Bensch, W.
    Kienle, L.
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (06) : 1322 - 1331
  • [36] Design of Multilevel Storage Medium through Sb2Te3/Ga2Sb3 Phase-Change Heterostructure
    Gu, Han
    Wu, Weihua
    Zhou, Xiaochen
    Zhang, Pei
    Fu, Bowen
    Zhu, Xiaoqin
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (02)
  • [37] Optimizing sputter deposition of Bi2Te3 and Sb2Te3 for photolithographic device fabrication
    Zahir, Rumana
    Hasan, Tanvir
    Labnongsaeng, Warut
    Sundaram, Kalpathy
    Ishigami, Masahiro
    Gonzalez, F. Javier
    Peale, Robert E.
    MRS ADVANCES, 2025,
  • [38] Thermoelectric properties of Bi2Te3 and Sb2Te3 and its bilayer thin films
    Pradyumnan, P. P.
    Swathikrishnan
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2010, 48 (02) : 115 - 120
  • [39] Electronic structure of antimonene grown on Sb2Te3 (111) and Bi2Te3 substrates
    Lei, Tao
    Liu, Chen
    Zhao, Jia-Li
    Li, Jin-Mei
    Li, Ya-Ping
    Wang, Jia-Ou
    Wu, Rui
    Qian, Hai-Jie
    Wang, Hui-Qiong
    Ibrahim, Kurash
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (01)
  • [40] Investigation of the Optical Properties of PLD-Grown Bi2Te3 and Sb2Te3
    Shaik, Muneer
    Motaleb, Ibrahim Abdel
    2013 IEEE INTERNATIONAL CONFERENCE ON ELECTRO-INFORMATION TECHNOLOGY (EIT 2013), 2013,
12345